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NTE273

Silicon Darlington Complementary

NTE273 Features

* D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector

* Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximu

NTE273 Datasheet (22.39 KB)

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Datasheet Details

Part number:

NTE273

Manufacturer:

NTE

File Size:

22.39 KB

Description:

Silicon darlington complementary.

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NTE273 Silicon Darlington Complementary NTE

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