NTE274 - Silicon Complementary Transistors Darlington Power Amplifier / Switch

NTE

NTE274 Datasheet Preview — Preview of NTE274 PDF

Datasheet Details

Part number	NTE274
Manufacturer	NTE
File Size	25.78 KB
Description	Silicon Complementary Transistors Darlington Power Amplifier / Switch
Datasheet	NTE274_NTEElectronics.pdf

NTE274 Product details

Description

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low frequency switching and hammer driver applications.

Features

D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

NTE27 - Germanium PNP Transistor High Current / High Gain Amp
NTE270 - Silicon Complementary Transistors Darlington Power Amp / Switch
NTE2708 - Integrated Circuit NMOS / 8K UV EPROM / 450ns
NTE271 - Silicon Complementary Transistors
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Published: May 9, 2005 |