NTE274 Datasheet - NTE

NTE274 Silicon Complementary Transistors Darlington Power Amplifier / Switch

NTE274 Features

* D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors Absolute Maximum

Datasheet Details

NTE274

NTE

25.78 KB

Silicon complementary transistors darlington power amplifier / switch.

📁 Related Datasheet

NTE27 Germanium PNP Transistor High Current / High Gain Amp (NTE)

NTE270 Silicon Complementary Transistors Darlington Power Amp / Switch (NTE)

NTE2708 Integrated Circuit NMOS / 8K UV EPROM / 450ns (NTE)

NTE271 Silicon Complementary Transistors (NTE)

NTE2716 Integrated Circuit NMOS / 16K UV Erasable PROM (NTE)

NTE272 Silicon Darlington Complementary Power Amplifiers (NTE)

NTE273 Silicon Darlington Complementary (NTE)

NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM (NTE)

TAGS

NTE274 Distributor