NTE29 - Silicon Complementary Transistors

NTE

NTE29 Datasheet Preview — Preview of NTE29 PDF

Datasheet Details

Part number	NTE29
Manufacturer	NTE
File Size	24.22 KB
Description	Silicon Complementary Transistors
Datasheet	NTE29_NTEElectronics.pdf

NTE29 Product details

Description

The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Features

D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.
. . 80V Emitter.

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Other Datasheets by NTE

NTE290 - Silicon Complementary Transistors
NTE2900 - N-Channel MOSFET
NTE2902 - N-Channel MOSFET
NTE2903 - N-Channel MOSFET
NTE2904 - N-Channel MOSFET
NTE2905 - P-Channel MOSFET

Published: May 9, 2005 |