NTE2928
NTE
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N-channel mosfet.
NTE2928 MOSFET N*Channel, Enhancement Mode High Speed Switch TO*220 Type Package
Features: D RDS(on.
) = 550mW Max @ VGS = 10V, ID = 6A D Low Gate Charge: 22nC Typ D Low CRSS: 11pF Typ D 100% Avalanche.
📁 Related Datasheet
NTE292 - Silicon Complementary Transistors Medium Power Amp / Switch
(NTE)
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors
Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purp.
NTE2920 - N-Channel MOSFET
(NTE)
NTE2920 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package
D
Features: D Drain Current: ID = 70A at TC = +25C D Drain Source Voltage.
NTE2921 - N-Channel MOSFET
(NTE)
NTE2921 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Ce.
NTE2922 - N-Channel MOSFET
(NTE)
NTE2922 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Ce.
NTE2923 - N-Channel MOSFET
(NTE)
NTE2923 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Ce.
NTE2924 - N-Channel MOSFET
(NTE)
NTE2924 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Ce.
