NTE2935 - N-Channel MOSFET

NTE

Datasheet Details

D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.6383 Typ D Lower Leakage Current: 105 A (Max) @ VDS = 500V D G S Absolute Maximum Ratings: Drain.
to.
Source Voltage, VDSS.
. . . 500V Drain CCuornretinntu, oIDus PulsTTeCCd==(N++o21t50e50C15C).

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Published: May 9, 2005 |