NTE2945 - N-Channel MOSFET

Datasheet Details

D Low Static Drain.
Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability D TO220 Type Isolated Package D G S Absolute Maximum Ratings: Drain.
Source Voltage (Note 1), VDSS.
. . . 400V Drain.
Gate Voltage (RGS = 1M+ , Note 1), VDGR.

📁 NTE2945 Similar Datasheet

NTE2996 - N-Channel MOSFET (NTE Electronics)
NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
NTE2393 - N-Channel MOSFET (INCHANGE)
NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)

Other Datasheets by NTE

Published: May 9, 2005 |