NTE2999
NTE
65.82kb
N-channel mosfet.
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📁 Related Datasheet
NTE299 - Silicon NPN Transistor
(NTE)
NTE299 Silicon NPN Transistor RF Power Amp, Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . .
NTE2990 - P-Channel MOSFET
(NTE)
NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch TO220 Full Pack
Features: D Low Drain−Source On−Resistance D Low Input Capacitance D Hig.
NTE2991 - N-Channel MOSFET
(NTE)
NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175C O.
NTE2992 - N-Channel MOSFET
(NTE)
NTE2992 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D 4V Gate Drive D Low Drain−Source On−Resistance.
NTE2993 - N-Channel MOSFET
(NTE)
NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Si.
NTE2994 - N-Channel MOSFET
(NTE)
NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, .
NTE2995 - N-Channel MOSFET
(NTE)
NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D RDS(on) = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Mini.
NTE2996 - N-Channel MOSFET
(NTE Electronics)
NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C O.
NTE2997 - P-Channel MOSFET
(NTE)
NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch
Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Op.
NTE2998 - P-Channel MOSFET
(NTE)
NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package
Features: D High Speed Switching D High Voltage D Hig.
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