Datasheet4U Logo Datasheet4U.com

NTE3321

Insulated Gate Bipolar Transistor

NTE3321 Features

* D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector

* Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE3321 Datasheet (20.97 KB)

Preview of NTE3321 PDF

Datasheet Details

Part number:

NTE3321

Manufacturer:

NTE

File Size:

20.97 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

NTE332 - Silicon Complementary Transistors (NTE)
NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epit.

NTE3320 - Insulated Gate Bipolar Transistor (NTE)
NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3322 - Insulated Gate Bipolar Transistor (NTE)
NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3323 - Insulated Gate Bipolar Transistor (NTE)
NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE330 - Germanium PNP Transistor (NTE)
NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low sat.

NTE3300 - Insulated Gate Bipolar Transistor (NTE)
NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D En.

NTE3301 - Insulated Gate Bipolar Transistor (NTE)
NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D En.

NTE3302 - Insulated Gate Bipolar Transistor (NTE)
NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

TAGS

NTE3321 Insulated Gate Bipolar Transistor NTE

Image Gallery

NTE3321 Datasheet Preview Page 2

NTE3321 Distributor