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NTE3321 Insulated Gate Bipolar Transistor

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Description

NTE3321 Insulated Gate Bipolar Transistor N *Channel Enhancement Mode, High Speed Switch .

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Datasheet Specifications

Part number
NTE3321
Manufacturer
NTE
File Size
20.97 KB
Datasheet
NTE3321_NTEElectronics.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector
* Emitter Voltage, VCES
* . . . 600V Gate
* Emitter Voltage, VGES

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