Datasheet4U Logo Datasheet4U.com

NTE3321 Insulated Gate Bipolar Transistor

NTE3321 Description

NTE3321 Insulated Gate Bipolar Transistor N *Channel Enhancement Mode, High Speed Switch .

NTE3321 Applications

* D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector
* Emitter Voltage, VCES
* . . . 600V Gate
* Emitter Voltage, VGES

📥 Download Datasheet

Preview of NTE3321 PDF
datasheet Preview Page 2

Datasheet Details

Part number
NTE3321
Manufacturer
NTE
File Size
20.97 KB
Datasheet
NTE3321_NTEElectronics.pdf
Description
Insulated Gate Bipolar Transistor

📁 Related Datasheet

  • NTE30002 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30003 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30004 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30005 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30006 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30007 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30008 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)
  • NTE30009 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)

📌 All Tags

Insulated Gate Bipolar Transistor NTE
NTE NTE3321-like datasheet