NTE3322 Datasheet, Transistor, NTE

NTE3322 Features

• Transistor D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Co

PDF File Details

Part number:

NTE3322

Manufacturer:

NTE

File Size:

20.97kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

NTE3322 Application

• Applications D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector
    –Emitter Voltage, VCE

TAGS

📁 Related Datasheet

NTE332 - Silicon Complementary Transistors (NTE)
NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epit.

NTE3320 - Insulated Gate Bipolar Transistor (NTE)
NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3321 - Insulated Gate Bipolar Transistor (NTE)
NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3323 - Insulated Gate Bipolar Transistor (NTE)
NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE330 - Germanium PNP Transistor (NTE)
NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low sat.

NTE3300 - Insulated Gate Bipolar Transistor (NTE)
NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D En.

NTE3301 - Insulated Gate Bipolar Transistor (NTE)
NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D En.

NTE3302 - Insulated Gate Bipolar Transistor (NTE)
NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3303 - Insulated Gate Bipolar Transistor (NTE)
NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE331 - Silicon Complementary Transistors (NTE)
NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epita.