NTE335 - Silicon NPN Transistor

Name: NTE335
SKU: NTE335-911801

NTE

The NTE335 by NTE is a Silicon NPN Transistor. Below is the official datasheet preview.

📥 Download Datasheet

NTE335 Silicon NPN Transistor by NTE - Datasheet Preview — Official preview page of the **NTE335** Silicon NPN Transistor datasheet (NTE).

Datasheet Details

Part number	NTE335
Manufacturer	NTE
File Size	55.78 KB
Description	Silicon NPN Transistor
Datasheet	NTE335-NTE.pdf
Additional preview pages of the NTE335 datasheet.

NTE335 Product details

Description

The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz.

Features

D Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% D Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 25V Collector.
Base Voltage, VCBO.

📁 NTE335 Similar Datasheet

NTE30002 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30003 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30004 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30005 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30006 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30007 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30008 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)
NTE30009 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)

Other Datasheets by NTE

NTE330 - Germanium PNP Transistor
NTE3300 - Insulated Gate Bipolar Transistor
NTE3301 - Insulated Gate Bipolar Transistor
NTE3302 - Insulated Gate Bipolar Transistor
NTE3303 - Insulated Gate Bipolar Transistor
NTE331 - Silicon Complementary Transistors

Published: Mar 29, 2015 |