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74AHC1G09

2-input AND gate

74AHC1G09 Features

* s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V s Low power dissipation s Specified from

* 40 °C to +85 °C and from

* 40 °C to +125 °C. 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3

74AHC1G09 General Description

The 74AHC1G09 is a high-speed Si-gate CMOS device. The 74AHC1G09 provides the 2-input AND function with open-drain output. The output of the 74AHC1G09 is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital o.

74AHC1G09 Datasheet (91.23 KB)

Preview of 74AHC1G09 PDF

Datasheet Details

Part number:

74AHC1G09

Manufacturer:

NXP ↗ Semiconductors

File Size:

91.23 KB

Description:

2-input and gate.

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74AHC1G09 2-input AND gate NXP Semiconductors

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