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BUK6C2R1-55C N-Channel MOSFET

BUK6C2R1-55C Description

D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev.3 * 18 January 2012 Product data sheet 1.Product profile 1.1 General d.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

BUK6C2R1-55C Features

* AEC Q101 compliant
* High current handling capability, up to 320 A
* Low conduction losses due to very low on-state resistance
* Suitable for standard and logic level gate drive sources

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