* AEC Q101 compliant
* High current handling capability, up to 320 A
* Low conduction losses due to very low on-state resistance
* Suitable for standard and logic level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
BUK6C2R1-55C Datasheet (185.52 KB)
BUK6C2R1-55C
NXP ↗ Semiconductors
185.52 KB
N-channel mosfet.
D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General d.
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