* AEC Q101 compliant
* High current handling capability, up to 320 A
* Low conduction losses due to very low on-state resistance
* Suitable for standard and logic level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
BUK6C3R3-75C Datasheet (188.08 KB)
BUK6C3R3-75C
NXP ↗ Semiconductors
188.08 KB
N-channel trenchmos intermediate level fet.
D2 PA K BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev. 3 18 January 2012 Product data sheet 1. Product profile 1.1 General d.
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