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BUK7610-55AL - N-Channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation.

Features

  • 175 °C rated.
  • Stable operation in linear mode.
  • Q101 compliant.
  • TrenchMOS technology 1.3.

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Datasheet Details

Part number BUK7610-55AL
Manufacturer NXP Semiconductors
File Size 195.54 KB
Description N-Channel MOSFET
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BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 — 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Stable operation in linear mode „ Q101 compliant „ TrenchMOS technology 1.3 Applications „ 12 V and 24 V loads „ DC linear motor control „ Automotive systems „ Repetitive clamped inductive switching 1.4 Quick reference data Table 1.
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