BUK7610-100B Datasheet PDF - NXP N-channel TrenchMOS standard level FET Specs

BUK7610-100B - N-channel TrenchMOS standard level FET

Datasheet Summary

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

Low conduction losses due to low on-state resistance.
Q101 compliant.
Suitable for standard level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

Datasheet Details

Part number	BUK7610-100B
Manufacturer	NXP
File Size	244.05 KB
Description	N-channel TrenchMOS standard level FET
Datasheet	BUK7610-100B Datasheet
Additional preview pages of the BUK7610-100B datasheet.

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Full PDF Text Transcription

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BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 1.4 Quick reference data Table 1.

Published: Mar 23, 2005 |