BUK7611-55B Datasheet PDF - NXP Semiconductors TRENCHMOS-TM STANDARD LEVEL FET Specs

BUK7611-55B - TRENCHMOS-TM STANDARD LEVEL FET

This page provides the datasheet information for the BUK7611-55B, a member of the BUK7E11-55B TRENCHMOS-TM STANDARD LEVEL FET family.

Datasheet Summary

Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Features

s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3.

Datasheet Details

Part number	BUK7611-55B
Manufacturer	NXP Semiconductors
File Size	327.53 KB
Description	TRENCHMOS-TM STANDARD LEVEL FET
Datasheet	BUK7611-55B Datasheet
Additional preview pages of the BUK7611-55B datasheet.

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Full PDF Text Transcription

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BUK75/76/7E11-55B TrenchMOS™ standard level FET Rev. 02 — 11 November 2003 www.DataSheet4U.com Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 9.9 mΩ (typ) s Ptot ≤ 157 W. 2.

Published: Jun 18, 2010 |