Datasheet4U Logo Datasheet4U.com

BUK7615-100A - TrenchMOS transistor Standard level FET

Datasheet Summary

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

📥 Download Datasheet

Datasheet preview – BUK7615-100A

Datasheet Details

Part number BUK7615-100A
Manufacturer NXP
File Size 69.04 KB
Description TrenchMOS transistor Standard level FET
Datasheet download datasheet BUK7615-100A Datasheet
Additional preview pages of the BUK7615-100A datasheet.

📁 Similar Datasheet

Other Datasheets by NXP
  • BUK7610-100B - N-channel TrenchMOS standard level FET
  • BUK7610-30 - TrenchMOS transistor Standard level FET
  • BUK7614-30 - TrenchMOS transistor Standard level FET
  • BUK7614-55 - TrenchMOS transistor Standard level FET
  • BUK7614-55 - TrenchMOS transistor Standard level FET
  • BUK7618-30 - TrenchMOS transistor Standard level FET
  • BUK7618-55 - N-channel TrenchMOS standard level FET
  • BUK7618-55 - N-channel TrenchMOS standard level FET

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7615-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
Published: |