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BUK761R8-30C N-Channel MOSFET

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Description

BUK761R8-30C N-channel TrenchMOS standard level FET Rev.02 * 20 August 2007 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS techn.

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Features

* 175 °C rated
* Standard level compatible
* Q101 compliant

Applications

* 12 V loads
* General purpose power switching
* Automotive systems
* Motors, lamps and solenoids 1.4 Quick reference data Table 1. ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; T

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BUK761R8-30C N-Channel MOSFET NXP Semiconductors
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