BUK9506-75B Datasheet PDF - NXP Semiconductors N-channel TrenchMOS logic level FET Specs

BUK9506-75B - N-channel TrenchMOS logic level FET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

AEC Q101 compliant.
Low conduction losses due to low on-state resistance.
Suitable for logic level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

Datasheet Details

Part number	BUK9506-75B
Manufacturer	NXP Semiconductors
File Size	369.81 KB
Description	N-channel TrenchMOS logic level FET
Datasheet	BUK9506-75B Datasheet
Additional preview pages of the BUK9506-75B datasheet.

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Full PDF Text Transcription

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TO -22 0A B BUK9506-75B N-channel TrenchMOS logic level FET Rev. 03 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Low conduction losses due to low on-state resistance  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.

Published: Aug 22, 2014 |