BUK9506-30 Datasheet - NXP

BUK9506-30, TrenchMOS transistor Logic level FET

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

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BUK9506-30_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK9506-30

Manufacturer:

NXP ↗

File Size:

48.08 KB

Description:

TrenchMOS transistor Logic level FET

Applications

* BUK9506-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 75 187 175 6 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DE

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BUK9506-30 TrenchMOS transistor Logic level FET NXP

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