PMZ950UPE Datasheet - NXP Semiconductors

PMZ950UPE, P-channel Trench MOSFET

PMZ950UPE 10 July 2014 SO T8 83 20 V, P-channel Trench MOSFET Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

Applications

* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V

PMZ950UPE-NXPSemiconductors.pdf