Datasheet4U Logo Datasheet4U.com

PMZ950UPEL P-channel MOSFET

PMZ950UPEL Description

PMZ950UPEL 20 V, P-channel Trench MOSFET 28 June 2016 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

PMZ950UPEL Features

* Low leakage current
* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM

PMZ950UPEL Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

📥 Download Datasheet

Preview of PMZ950UPEL PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PMZ950UPE - P-channel Trench MOSFET (NXP Semiconductors)
  • PMZ1000UN - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PMZ1200UPE - P-channel Trench MOSFET (NXP)
  • PMZ130UNE - N-channel Trench MOSFET (NXP)
  • PMZ200UNE - N-channel Trench MOSFET (NXP)
  • PMZ250UN - N-channel TrenchMOS extremely low level FET (NXP Semiconductors)
  • PMZ270XN - N-channel TrenchMOS extremely low level FET (NXP Semiconductors)
  • PMZ290UNE2 - N-channel Trench MOSFET (NXP)

📌 All Tags

P-channel MOSFET nexperia
nexperia PMZ950UPEL-like datasheet