PMZ600UNE Datasheet - nexperia

N-channel MOSFET

* Trench MOSFET technology

* Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm

* ElectroStatic Discharge (ESD) protection > 1 kV HBM

* Drain-source on-state resistance RDSon = 470 mΩ 3. Applications

* Relay driver

* High-speed line driver

PMZ600UNE

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N-channel mosfet.

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PMZ600UNE N-channel MOSFET nexperia

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