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PMZ950UPE P-channel MOSFET

PMZ950UPE Description

PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

PMZ950UPE Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM

PMZ950UPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s

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