PMZB350UPE single P-channel Trench MOSFET

NXP Semiconductors

Description

PMZB350UPE 1 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMZB350UPE
Manufacturer: NXP ↗ Semiconductors
File Size: 188.52 KB
Datasheet: PMZB350UPE-NXPSemiconductors.pdf
Description: single P-channel Trench MOSFET

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS

PMZB350UPE Distributors

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PMZB350UPE single P-channel Trench MOSFET NXP Semiconductors

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