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PMZB220VPE 12V P-channel Trench MOSFET

PMZB220VPE Description

PMZB220VPE 12 V, P-channel Trench MOSFET 16 June 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB220VPE Features

* Very low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection typically > 2 kV

PMZB220VPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage

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12V P-channel Trench MOSFET nexperia
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