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PMZB370UNE N-channel MOSFET

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Description

PMZB370UNE 30 V, single N-channel Trench MOSFET Rev.1 * 8 May 2012 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Features

* Very fast switching
* Trench MOSFET technology
* Low threshold voltage
* Ultra thin package profile with 0.37 mm height

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resi

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