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PMZB170VNE 12V N-channel Trench MOSFET

PMZB170VNE Description

PMZB170VNE 12 V, N-channel Trench MOSFET 16 June 2025 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB170VNE Features

* Very low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection typically > 2 kV

PMZB170VNE Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain

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12V N-channel Trench MOSFET nexperia
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