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PMZB600UNE N-channel MOSFET

PMZB600UNE Description

PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB600UNE Features

* Trench MOSFET technology
* Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM

PMZB600UNE Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

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