PMZB1200UPE P-channel Trench MOSFET

NXP

Description

SOT883B PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Datasheet Specifications

Part number: PMZB1200UPE
Manufacturer: NXP ↗
File Size: 210.50 KB
Datasheet: PMZB1200UPE-NXP.pdf
Description: P-channel Trench MOSFET

Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

PMZB1200UPE Distributors

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PMZB1200UPE P-channel Trench MOSFET NXP

NXP PMZB1200UPE-like datasheet