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PMZB350UPE P-channel MOSFET

PMZB350UPE Description

PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB350UPE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

PMZB350UPE Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 -

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