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PMZB290UNE2 N-channel MOSFET

PMZB290UNE2 Description

PMZB290UNE2 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

PMZB290UNE2 Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

PMZB290UNE2 Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-sou

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