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2N7002P - 360mA N-channel Trench MOSFET

2N7002P Description

2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev.02 * 29 July 2010 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

2N7002P Features

* AEC-Q101 qualified
* Logic-level compatible
* Trench MOSFET technology

2N7002P Applications

* High-speed line driver
* Low-side loadswitch
* Relay driver
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 1

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Datasheet Details

Part number
2N7002P
Manufacturer
NXP ↗
File Size
138.31 KB
Datasheet
2N7002P-NXP.pdf
Description
360mA N-channel Trench MOSFET

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360mA N-channel Trench MOSFET NXP
NXP 2N7002P-like datasheet