2N7002P 360mA N-channel Trench MOSFET

NXP

Description

2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev.02 * 29 July 2010 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: 2N7002P
Manufacturer: NXP ↗
File Size: 138.31 KB
Datasheet: 2N7002P-NXP.pdf
Description: 360mA N-channel Trench MOSFET

Features

* AEC-Q101 qualified
* Logic-level compatible
* Trench MOSFET technology

Applications

* High-speed line driver
* Low-side loadswitch
* Relay driver
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 1

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2N7002P 360mA N-channel Trench MOSFET NXP

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