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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
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Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features
I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV
1.3 Applications
I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-source on-state resistance single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 mA Conditions Min Typ 1.
2N7002CK Datasheet
