BF1203 Dual N-channel dual gate MOS-FET

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product speciﬁcation Supersedes data of 2000 De.
g1 (b) 4 s d (b) 6 5 DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads.

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Datasheet Specifications

Part number: BF1203
Manufacturer: NXP ↗
File Size: 166.54 KB
Datasheet: BF1203_PhilipsSemiconductors.pdf
Description: Dual N-channel dual gate MOS-FET

Features

* Two low noise gain controlled amplifiers in a single package
* Superior cross-modulation performance during AGC
* High forward transfer admittance

Applications

* Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. handbook, halfpage BF1203 PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (a) gate 2 drain (a) drain (b) source g

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BF1203 Dual N-channel dual gate MOS-FET NXP

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