BF1202R Datasheet - NXP

BF1202R N-channel dual-gate PoLo MOS-FETs

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and sou.

BF1202R Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier

* Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

* VH

BF1202R_PhilipsSemiconductors.pdf