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BF1201WR - N-channel dual-gate PoLo MOS-FETs

BF1201WR Description

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product speciļ¬cation Supersedes data of 1999 Dec 01 2.
source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.

BF1201WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier

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N-channel dual-gate PoLo MOS-FETs NXP
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