BF1201R Datasheet PDF - NXP N-channel dual-gate PoLo MOS-FETs Specs

BF1201R - N-channel dual-gate PoLo MOS-FETs

Datasheet Summary

Description

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier.
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

Datasheet Details

Part number	BF1201R
Manufacturer	NXP
File Size	113.99 KB
Description	N-channel dual-gate PoLo MOS-FETs
Datasheet	BF1201R Datasheet
Additional preview pages of the BF1201R datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product speciﬁcation Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product speciﬁcation N-channel dual-gate PoLo MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.

Published: Mar 23, 2005 |