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BF1205 Dual N-channel dual gate MOS-FET

BF1205 Description

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semicond.
1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) APPLICATIONS. Gain controlled low noise amplifiers for VHF and U.

BF1205 Features

* Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
* Internal switch reduces the number of external components
* Superior cross-modulation performance during AGC
* High forward transfer admittance

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Dual N-channel dual gate MOS-FET NXP
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