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BF1205 - Dual N-channel dual gate MOS-FET

Datasheet Summary

Description

1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) APPLICATIONS

Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.

Features

  • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias.
  • Internal switch reduces the number of external components.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.

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Datasheet preview – BF1205

Datasheet Details

Part number BF1205
Manufacturer NXP
File Size 626.42 KB
Description Dual N-channel dual gate MOS-FET
Datasheet download datasheet BF1205 Datasheet
Additional preview pages of the BF1205 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Dual N-channel dual gate MOS-FET Product specification BF1205 FEATURES  Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias  Internal switch reduces the number of external components  Superior cross-modulation performance during AGC  High forward transfer admittance  High forward transfer admittance to input capacitance ratio.
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