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BF1206 Dual N-channel dual-gate MOS-FET

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Description

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semicond.
The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads.

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Features

* Two low noise gain controlled amplifiers in a single package
* Superior cross-modulation performance during AGC
* High forward transfer admittance

BF1206 Distributors

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BF1206 Dual N-channel dual-gate MOS-FET NXP
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