BFR106
80.85kb
Npn 5 ghz wideband transistor. NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.
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BFR10 - NPN Transistor
(SGS-ATES)
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BFR106 - NPN Silicon RF Transistor
(Siemens Semiconductor Group)
BFR 106
NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • .
BFR106 - Low Noise Silicon Bipolar RF Transistor
(Infineon Technologies AG)
Low Noise Silicon Bipolar RF Transistor
• High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA • For UHF / VHF .
BFR106 - NPN Transistor
(INCHANGE)
isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain
︱S21e︱2 = 10.5 dB TYP. @V.
BFR11 - NPN Transistor
(SGS-ATES)
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BFR14B - NPN SILICON MICROWAVE TRANSISTOR
(Siemens Semiconductor Group)
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BFR14C - NPN SILICON MICROWAVE TRANSISTOR
(Siemens Semiconductor Group)
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BFR16 - NPN Transistor
(SGS-ATES)
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BFR17 - NPN Transistor
(SGS-ATES)
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BFR18 - NPN Transistor
(SGS-ATES)
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