BFU530W Datasheet - NXP

BFU530W NPN wideband silicon RF transistor

BFU530W Features

* Low noise, high breakdown RF transistor

* AEC-Q101 qualified

* Minimum noise figure (NFmin) = 0.6 dB at 900 MHz

* Maximum stable gain 18.5 dB at 900 MHz

* 11 GHz fT silicon technology 1.3 Applications

* Applications requiring high supply voltages and high breakdown voltages

Datasheet Details

BFU530W

296.80 KB

Npn wideband silicon rf transistor.

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BFU530W NPN wideband silicon transistor NXP

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