Datasheet Details
Part number:
BFU660F
Manufacturer:
NXP ↗ Semiconductors
File Size:
122.95 KB
Description:
NPN wideband silicon RF transistor
Features
* Low noise high linearity RF transistor
* High output third-order intercept point 27 dBm at 1.8 GHz
* 40 GHz fT silicon technology 1.3 Applications
* Analog/digital cordless applications
* X-band high output buffer amplifier
* ZigBee
* SDARS s
BFU660F, NPN wideband silicon RF transistor
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20
BFU660F Distributor
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