BFU520W - NPN wideband silicon RF transistor
BFU520W Features
* Low noise, high breakdown RF transistor
* AEC-Q101 qualified
* Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
* Maximum stable gain 18.5 dB at 900 MHz
* 11 GHz fT silicon technology 1.3 Applications
* Applications requiring high supply voltages and high breakdown voltages
