BFU520Y - Dual NPN wideband silicon RF transistor
BFU520Y Features
* Low noise, high breakdown RF transistor
* AEC-Q101 qualified
* Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
* Maximum stable gain 19 dB at 900 MHz
* 11 GHz fT silicon technology 1.3 Applications
* Applications requiring high supply voltages and high breakdown voltages
