BFU510 Datasheet - NXP

BFU510 NPN SiGe wideband transistor

handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain.

BFU510 Features

* Very high power gain

* Very low noise figure

* High transition frequency

* Emitter is thermal lead

* Low feedback capacitance

* 45 GHz SiGe process. APPLICATIONS

* RF front end

* Wideband applications, e.g. analog and digital cellular

BFU510_PhilipsSemiconductors.pdf