BFU510 - NPN SiGe wideband transistor
handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain
BFU510 Features
* Very high power gain
* Very low noise figure
* High transition frequency
* Emitter is thermal lead
* Low feedback capacitance
* 45 GHz SiGe process. APPLICATIONS
* RF front end
* Wideband applications, e.g. analog and digital cellular
