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BFU510 - NPN SiGe wideband transistor

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BFU510 Product details

Description

handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 115 °C IC = 10 mA; VCE = 2 V; Tj = 25 °C IC = 0.5 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt CAUTION This product is supplied in anti-static packing to prevent damage cau

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