BFU710F Datasheet - NXP Semiconductors

NPN wideband silicon germanium RF transistor

BFU710F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 1.45 dB at 12 GHz

* High maximum power gain 14 dB at 12 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* 2nd LNA stage and mixer stage in DBS LNB’s

* Low noise amplifiers

BFU710F General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/.

BFU710F Datasheet (126.39 KB)

BFU710F Datasheet Preview — Preview of BFU710F PDF

Datasheet Details

Part number:

BFU710F

Manufacturer:

NXP ↗ Semiconductors

File Size:

126.39 KB

Description:

Npn wideband silicon germanium rf transistor.
BFU710F NPN wideband silicon germanium RF transistor Rev. 1 20 April 2011 Product data sheet 1. Product profile CAUTION 1.1 General de.

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BFU710F NPN wideband silicon germanium transistor NXP Semiconductors

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BFU710F Features

BFU710F General Description

Datasheet Details

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