BFU710F Datasheet, Transistor, NXP Semiconductors

✔ BFU710F Features

Low noise high gain microwave transistor
Noise figure (NF) = 1.45 dB at 12 GHz
High maximum power gain 14 dB at 12 GHz
110 GHz fT silicon germanium technology 1.3

✔ BFU710F Application

in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD).

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BFU710F

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NXP ↗ Semiconductors

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📄 Datasheet

Description:

Npn wideband silicon germanium rf transistor. NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. T

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Stock and price

NXP Semiconductors

RF TRANS NPN 2.8V 43GHZ 4-DFP

DigiKey

BFU710F,115

6216 In Stock

Qty : 1000 units

Unit Price : $0.27

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BFU710F NPN wideband silicon germanium transistor NXP Semiconductors