BFU710F Datasheet - NXP Semiconductors

BFU710F NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/.

BFU710F Features

* Low noise high gain microwave transistor

* Noise figure (NF) = 1.45 dB at 12 GHz

* High maximum power gain 14 dB at 12 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

* 2nd LNA stage and mixer stage in DBS LNB’s

* Low noise amplifiers

BFU710F_NXPSemiconductors.pdf