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BFU710F NPN wideband silicon germanium RF transistor

NXP Semiconductors

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Description

BFU710F NPN wideband silicon germanium RF transistor Rev.1 * 20 April 2011 Product data sheet 1.Product profile CAUTION 1.1 General de.
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

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Datasheet Specifications

Part number: BFU710F
Manufacturer: NXP ↗ Semiconductors
File Size: 126.39 KB
Datasheet: BFU710F_NXPSemiconductors.pdf
Description: NPN wideband silicon germanium RF transistor

Features

* Low noise high gain microwave transistor
* Noise figure (NF) = 1.45 dB at 12 GHz
* High maximum power gain 14 dB at 12 GHz

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BFU710F NPN wideband silicon germanium transistor NXP Semiconductors

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