BFU710F - NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/
BFU710F Features
* Low noise high gain microwave transistor
* Noise figure (NF) = 1.45 dB at 12 GHz
* High maximum power gain 14 dB at 12 GHz
* 110 GHz fT silicon germanium technology 1.3 Applications
* 2nd LNA stage and mixer stage in DBS LNB’s
* Low noise amplifiers
