BFU730F - wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in t
BFU730F Features
* Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications
