BFU730F Datasheet, transistor equivalent, NXP Semiconductors

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Part number: BFU730F

Manufacturer: NXP (https://www.nxp.com/) Semiconductors

File Size: 154.24KB

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Description: wideband silicon germanium RF transistor

Datasheet Preview: BFU730F 📥 Download PDF (154.24KB)

BFU730F Features and benefits


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* Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germa.

BFU730F Application

in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Obs.

BFU730F Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sens.

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TAGS

BFU730F
wideband
silicon
germanium
transistor
NXP Semiconductors

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