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BFU730F Datasheet - NXP Semiconductors

BFU730F wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in t.

BFU730F Features

* Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications

BFU730F_NXPSemiconductors.pdf

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Datasheet Details

Part number:

BFU730F

Manufacturer:

NXP ↗ Semiconductors

File Size:

154.24 KB

Description:

Wideband silicon germanium rf transistor.

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BFU730F BFU730F wideband silicon germanium transistor NXP Semiconductors

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