BFU730F Datasheet - NXP Semiconductors

wideband silicon germanium RF transistor

BFU730F Features

* Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications

BFU730F General Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in t.

BFU730F Datasheet (154.24 KB)

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Datasheet Details

Part number:

BFU730F

Manufacturer:

NXP ↗ Semiconductors

File Size:

154.24 KB

Description:

Wideband silicon germanium rf transistor.

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BFU730F wideband silicon germanium transistor NXP Semiconductors

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BFU730F Features

BFU730F General Description

Datasheet Details

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Description:

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