BFU790F Datasheet - NXP

BFU790F NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/.

BFU790F Features

* Low noise high linearity microwave transistor

* 110 GHz fT silicon germanium technology

* High maximum output power at 1 dB compression 20 dBm at 1.8 GHz 1.3 Applications

* High linearity applications

* Medium output power applications

* Wi-Fi / WLAN

BFU790F Datasheet (108.25 KB)