BFU768F Datasheet - NXP

BFU768F NPN wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/.

BFU768F Features

* Low noise high linearity RF transistor

* 110 GHz fT silicon germanium technology

* Optimal linearity for low current and high gain

* Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz

* Low component count Wi-Fi LNA application circuits available for 2.4 GHz

BFU768F Datasheet (143.55 KB)