BFU768F - NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/
BFU768F Features
* Low noise high linearity RF transistor
* 110 GHz fT silicon germanium technology
* Optimal linearity for low current and high gain
* Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
* Low component count Wi-Fi LNA application circuits available for 2.4 GHz
